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IRFP450B Image

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Mfr. #：
IRFP450B
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through hole N channel 500 V 14A (Tc) 205W (Tc) TO-3P
Datasheet:
Datasheet
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 500 V
Current at 25°C - Continuous Drain (Id) 14A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 390 mOhm @ 7A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 113 nC @ 10 V
Vgs (max) ±30V
Various Vds Input Capacitance (Ciss) (Max) 3800 pF @ 25 V
FET Function -
Power Dissipation (Max) 205W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package/Case TO-3P-3, SC-65-3
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