FQA10N80_F109 ON | ON agency

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Mfr. #：

FQA10N80_F109

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Through hole N channel 800 V 9.8A (Tc) 240W (Tc) TO-3P

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	QFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	800 V
Current at 25°C - Continuous Drain (Id)	9.8A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	1.05 ohms @ 4.9A, 10V
Vgs(th) (max) at Id	5V @ 250μA
Gate Charge?(Qg) (max) at Vgs	71 nC @ 10 V
Vgs (max)	±30V
Various Vds Input Capacitance (Ciss) (max)	2700 pF @ 25 V
FET Function	-
Power Dissipation (max)	240W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P
Package/Case	TO-3P-3, SC-65-3

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