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Mfr. #:
2N7000G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through-hole N channel 60 V 200mA (Ta) 350mW (Tc) TO-92 (TO-226)
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 200 mA (Ta)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at different Id, Vgs 5 Ohm @ 500 mA, 10 V
Vgs(th) (max) at different Id 3 V @ 1 mA
Vgs (max) ±20 V
Input Capacitance (Ciss) (max) at different Vds 60 pF @ 25 V
FET Function -
Power dissipation (max) 350mW (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package TO-92 (TO-226)
Package/case TO-226-3, TO-92-3 long body
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