2N7000RLRMG ON | ON agency

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Mfr. #：

2N7000RLRMG

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Through-hole N channel 60 V 200mA (Ta) 350mW (Tc) TO-92 (TO-226)

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	-
Package	Tape and Box (TB)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	60 V
Current at 25°C - Continuous Drain (Id)	200 mA (Ta)
Drive Voltage (Rds On Max, Rds On Min)	4.5 V, 10 V
On-Resistance (max) at different Id, Vgs	5 Ohm @ 500 mA, 10 V
Vgs(th) (max) at different Id	3 V @ 1 mA
Vgs (max)	±20 V
Input Capacitance (Ciss) (max) at different Vds	60 pF @ 25 V
FET Function	-
Power dissipation (max)	350mW (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Through hole
Supplier device package	TO-92 (TO-226)
Package/case	TO-226-3, TO-92-3 Long body (formed leads)

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