LOGO
LOGO
FQD2N80TF Image

img for reference only

Mfr. #:
FQD2N80TF
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Surface mount N channel 800 V 1.8A (Tc) 2.5W (Ta), 50W (Tc) TO-252AA
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series QFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 800 V
Current at 25°C - Continuous Drain (Id) 1.8A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at different Id, Vgs 6.3 ohms @ 900mA, 10V
Vgs(th) (max) at different Id 5V @ 250μA
Gate Charge?(Qg) (max) at different Vgs 15 nC @ 10 V
Vgs (max) ±30V
Various Vds Input Capacitance (Ciss) (Max) 550 pF @ 25 V
FET Function -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package/Case TO-252-3, DPak (2-Lead Tab), SC-63
Related models
  • MC74HC245ADTR2G

    Transceiver, Non-Inverting 1 Element 8 Bits Each Element 3-State Output 20-TSSOP

  • MC74VHCT126ADR2G

    Buffer, Non-Inverting 4 Elements 1 Bit Each Element 3-State Output 14-SOIC

  • NVMTS0D7N06CTXG

    Surface mount N-channel 60 V 60.5A (Ta), 464A (Tc) 5W (Ta), 294.6W (Tc) 8-DFNW (8.3x8.4)

  • NVHL040N65S3

    Through Hole N Channel 650 V 65A (Tc) 417W (Tc) TO-247-3

  • NVH050N65S3F

    Through Hole N Channel 650 V 58A (Tc) 403W (Tc) TO-247-3

  • NVHL050N65S3F

    Through Hole N Channel 650 V 58A (Tc) 403W (Tc) TO-247-3

  • NVMFS5C604NLWFT1G

    Surface Mount N-Channel 60 V 40A (Ta), 287A (Tc) 3.9W (Ta), 200W (Tc) 5-DFN (5x6) (8-SOFL)

  • NTMTS0D4N04CTXG

    Surface mount N-channel 40 V 79.8A (Ta), 558A (Tc) 5W (Ta), 244W (Tc) 8-DFNW (8.3x8.4)

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd