LOGO
LOGO
FQPF4P40 Image

img for reference only

Mfr. #:
FQPF4P40
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through hole P channel 400 V 2.4A (Tc) 39W (Tc) TO-220F-3
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series QFET?
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 400 V
Current at 25°C - Continuous Drain (Id) 2.4A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 3.1 ohms @ 1.2A, 10V
Vgs(th) (max) at Id 5V @ 250μA
Gate Charge?(Qg) (max) at Vgs 23 nC @ 10 V
Vgs (max) ±30V
Various Vds Input Capacitance (Ciss) (Max) 680 pF @ 25 V
FET Function -
Power Dissipation (Max) 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package/Case TO-220-3 Full Package
Related models
  • NTMS10P02R2G

    Power MOSFET, ±10 A, -20 V, P-channel Enhancement Mode, Single SOIC ±8 Package

  • FDS8878

    This N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters and can use either a synchronous switching PWM controller or a conventional switching PWM controller. It is optimized for low gate charge, low RDS(ON) and fast switching.

  • NTMS5P02R2G

    This is a 20 VP Trench Power MOSFET.

  • NTMD3P03R2G

    Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SOIC-8

  • FCB11N60TM

    Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 33A; 125W; D2PAK

  • FCB20N60FTM

    Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK

  • NTMFS6H800NT1G

    Commercial power MOSFETs for compact and efficient designs, housed in a 5x6mm flat lead package with high thermal performance.

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd