NDP6020P ON | ON agency

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Mfr. #：

NDP6020P

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Through hole P channel 20 V 24A (Tc) 60W (Tc) TO-220-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	-
Package	Tube
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	20 V
Current at 25°C - Continuous Drain (Id)	24A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V
On-Resistance (max) at Id, Vgs	50 milliohms @ 12A, 4.5V
Vgs(th) (max) at Id	1V @ 250μA
Gate Charge (Qg) (max) at Vgs	35 nC @ 5 V
Vgs (max)	±8V
Vds Input Capacitance (Ciss) (Max)	1590 pF @ 10 V
FET Function	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-65°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package/Case	TO-220-3

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