FQPF6N40C ON | ON agency

img for reference only

Mfr. #：

FQPF6N40C

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Through hole N channel 400 V 6A (Tc) 38W (Tc) TO-220F-3

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	QFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	400 V
Current at 25°C - Continuous Drain (Id)	6A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at different Id, Vgs	1 ohm @ 3A, 10V
Vgs(th) (max) at different Id	4V @ 250μA
Gate Charge?(Qg) (max) at different Vgs	20 nC @ 10 V
Vgs (max)	±30V
Various Vds Input Capacitance (Ciss) (Max)	625 pF @ 25 V
FET Function	-
Power Dissipation (Max)	38W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F-3
Package/Case	TO-220-3 Full Package

74ACTQ32SCX
NLV74VHCT00ADTR2G

The MC74VHCT00A is an advanced high speed CMOS 2-Input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation.
NLV74LCX32DTR2G
MC74VHCT02ADTR2G
74LVX02MTCX
74VHCT00AMTCX

The VHCT00A is an advanced high speed CMOS 2-input NAND gate manufactured using a silicon gate CMOS process. It achieves high speed operation similar to equivalent bipolar Schottky TTL while maintaining CMOS low power consumption. The internal circuit consists of three stages, including a ?
74VCX86MX
NLV74HC14ADTG

High-Performance Silicon-Gate CMOS