FQI9N08LTU ON | ON agency

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Mfr. #：

FQI9N08LTU

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Through-hole N-channel 80 V 9.3A (Tc) 3.75W (Ta), 40W (Tc) I2PAK (TO-262)

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	QFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	80 V
Current at 25°C - Continuous Drain (Id)	9.3A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	5V, 10V
On-Resistance (max) at different Id, Vgs	210 mOhm @ 4.65A, 10V
Vgs(th) (max) at different Id	2V @ 250μA
Gate Charge?(Qg) (max) at different Vgs	6.1 nC @ 5 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (max)	280 pF @ 25 V
FET Function	-
Power Dissipation (max)	3.75W (Ta), 40W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package/Case	TO-262-3, Long Lead, I2Pak, TO-262AA

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