FQD20N06TF ON | ON agency

img for reference only

Mfr. #：

FQD20N06TF

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Surface mount N channel 60 V 16.8A (Tc) 2.5W (Ta), 38W (Tc) TO-252AA

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	QFET?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	60 V
Current at 25°C - Continuous Drain (Id)	16.8A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	63 mOhm @ 8.4A, 10V
Vgs(th) (max) at Id	4V @ 250μA
Gate Charge?(Qg) (max) at Vgs	15 nC @ 10 V
Vgs (max)	±25V
Various Vds Input Capacitance (Ciss) (max)	590 pF @ 25 V
FET Function	-
Power Dissipation (max)	2.5W (Ta), 38W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package/Case	TO-252-3, DPak (2-Lead Tab), SC-63

FJNS4201RTA

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92S
FJNS4211RTA

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 40 V 100 mA 200 MHz 300 mW Through Hole TO-92S
FJNS4202RTA

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92S
FJNS4207RTA

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92S
FJNS4212RBU

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 40 V 100 mA 200 MHz 300 mW Through Hole TO-92S
FJNS4213RBU

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92S
FJNS4208RTA

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92S
FJNS4213RTA

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92S