LOGO
LOGO
IRL610A Image

img for reference only

Mfr. #:
IRL610A
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through hole N channel 200 V 3.3A (Tc) 33W (Tc) TO-220-3
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 200 V
Current at 25°C - Continuous Drain (Id) 3.3A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 5V
On-Resistance (max) at Id, Vgs 1.5 ohms @ 1.65A, 5V
Vgs(th) (max) at Id 2V @ 250μA
Gate Charge (Qg) (max) at Vgs 9 nC @ 5 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 240 pF @ 25 V
FET Function -
Power Dissipation (max) 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package/Case TO-220-3
ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd