IRL610A ON | ON agency

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Mfr. #：

IRL610A

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Through hole N channel 200 V 3.3A (Tc) 33W (Tc) TO-220-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	200 V
Current at 25°C - Continuous Drain (Id)	3.3A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	5V
On-Resistance (max) at Id, Vgs	1.5 ohms @ 1.65A, 5V
Vgs(th) (max) at Id	2V @ 250μA
Gate Charge (Qg) (max) at Vgs	9 nC @ 5 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (max)	240 pF @ 25 V
FET Function	-
Power Dissipation (max)	33W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package/Case	TO-220-3

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