FQPF7N10 ON | ON agency

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Mfr. #：

FQPF7N10

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Through hole N channel 100 V 5.5A (Tc) 23W (Tc) TO-220F-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	QFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	5.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	350 mOhm @ 2.75A, 10V
Vgs(th) (max) at Id	4V @ 250μA
Gate Charge?(Qg) (max) at Vgs	7.5 nC @ 10 V
Vgs (max)	±25V
Various Vds Input Capacitance (Ciss) (Max)	250 pF @ 25 V
FET Function	-
Power Dissipation (Max)	23W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F-3
Package/Case	TO-220-3 Full Package

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