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NTP52N10G Image

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Mfr. #:
NTP52N10G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through hole N channel 100 V 60A (Ta) 214W (Tc) TO-220
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 60A (Ta)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 30 mOhm @ 26A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge (Qg) (max) at Vgs 135 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 3150 pF @ 25 V
FET Function -
Power Dissipation (max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package/Case TO-220-3
ON hot selling models
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