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NTP60N06G Image

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Mfr. #:
NTP60N06G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through hole N channel 60 V 60A (Ta) 2.4W (Ta), 150W (Tj) TO-220
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 60 A (Ta)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 14 mOhm @ 30 A, 10 V
Vgs(th) (max) at Id 4 V @ 250 μA
Gate Charge (Qg) (max) at Vgs 81 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 3220 pF @ 25 V
FET Function -
Power Dissipation (max) 2.4W (Ta), 150W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package/Case TO-220-3
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