NTP60N06G ON | ON agency

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Mfr. #：

NTP60N06G

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Through hole N channel 60 V 60A (Ta) 2.4W (Ta), 150W (Tj) TO-220

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	60 V
Current at 25°C - Continuous Drain (Id)	60 A (Ta)
Drive Voltage (Rds On Max, Rds On Min)	10 V
On-Resistance (max) at Id, Vgs	14 mOhm @ 30 A, 10 V
Vgs(th) (max) at Id	4 V @ 250 μA
Gate Charge (Qg) (max) at Vgs	81 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (max)	3220 pF @ 25 V
FET Function	-
Power Dissipation (max)	2.4W (Ta), 150W (Tj)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package/Case	TO-220-3

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