LOGO
LOGO
MTD5P06VT4 Image

img for reference only

Mfr. #:
MTD5P06VT4
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Surface mount type P channel 60 V 5A (Tc) 2.1W (Ta), 40W (Tc) DPAK
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Packaging Tape and Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 5A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 450 mOhm @ 2.5A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 20 nC @ 10 V
Vgs (max) ±15V
Various Vds Input Capacitance (Ciss) (Max) 510 pF @ 25 V
FET Function -
Power Dissipation (Max) 2.1W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package/Case TO-252-3, DPak (2-Lead Tab), SC-63
Related models
  • MJ802G

    MJ Series 90 V 30 A Screw Mount High Power NPN Silicon Transistor - TO-204AA

  • NTPF600N80S3Z

    SF3 800V 600MOHM TO-220F

  • NXH010P120MNF1PNG

    2N-Channel 1200 V 114 A 250 W Chassis Mount Mosfet Array - Module

  • NXH010P120MNF1PTNG

    a SiC MOSFET module containing a 10 mohm 1200V SiC MOSFET half bridge and an NT

  • NXH020F120MNF1PTG

    PIM F1 SIC FULL BRIDGE 1200V 20MOHM

  • NXH300B100H4Q2F2PG

    1118 V 73 A 194 W Trench Field Stop Dual IGBT Module - 53-PIM/Q2PACK

  • NXH300B100H4Q2F2SG

    Si/SiC Hybrid Modules, 3 Channel flying capacitor Boost, PIM-68

  • NXH40B120MNQ0SNG

    Full SiC MOSFET Module, Two Channel Full SiC Boost, 1200 V, ,PIM-22

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd