FCI25N60N-F102 ON | ON agency

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Mfr. #：

FCI25N60N-F102

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Through Hole N Channel 600 V 25A (Tc) 216W (Tc) I2PAK (TO-262)

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	SupreMOS?
Package	Device
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	600 V
Current at 25°C - Continuous Drain (Id)	25A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	125 mOhm @ 12.5A, 10V
Vgs(th) (max) at Id	4V @ 250μA
Gate Charge?(Qg) (max) at Vgs	74 nC @ 10 V
Vgs (max)	±30V
Various Vds Input Capacitance (Ciss) (max)	3352 pF @ 100 V
FET Function	-
Power Dissipation (max)	216W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package/Case	TO-262-3, Long Lead, I2Pak, TO-262AA

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