LOGO
LOGO
FCI25N60N-F102 Image

img for reference only

Mfr. #:
FCI25N60N-F102
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through Hole N Channel 600 V 25A (Tc) 216W (Tc) I2PAK (TO-262)
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series SupreMOS?
Package Device
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 600 V
Current at 25°C - Continuous Drain (Id) 25A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 125 mOhm @ 12.5A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 74 nC @ 10 V
Vgs (max) ±30V
Various Vds Input Capacitance (Ciss) (max) 3352 pF @ 100 V
FET Function -
Power Dissipation (max) 216W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package/Case TO-262-3, Long Lead, I2Pak, TO-262AA
ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd