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FCH190N65F-F155 Image

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Mfr. #:
FCH190N65F-F155
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through Hole N Channel 650 V 20.6A (Tc) 208W (Tc) TO-247-3
Datasheet:
In Stock:
415
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series FRFET?, SuperFET? II
Package Tube
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 20.6A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 190 mOhm @ 10A, 10V
Vgs(th) (max) at Id 5V @ 2mA
Gate Charge?(Qg) (max) at Vgs 78 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 3225 pF @ 100 V
FET Function -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package/Case TO-247-3
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