NTMFS4H013NFT3G ON | ON agency

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Mfr. #：

NTMFS4H013NFT3G

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Surface mount N-channel 25 V 43A (Ta), 269A (Tc) 2.7W (Ta), 104W (Tc) 5-DFN (5x6) (8-SOFL)

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	-
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	25 V
Current at 25°C - Continuous Drain (Id)	43A (Ta), 269A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (max) at Id, Vgs	0.9 milliohms @ 30A, 10V
Vgs(th) (max) at Id	2.1V @ 250μA
Gate Charge (Qg) (max) at Vgs	56 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max) at Vds	3923 pF @ 12 V
FET function	-
Power dissipation (max)	2.7W (Ta), 104W (Tc)
Operating temperature	150°C (TJ)
Mounting type	Surface mount
Supplier device package	5-DFN (5x6) (8-SOFL)
Package/case	8-PowerTDFN, 5-lead

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