HUF75639P3-F102 ON | ON agency

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Mfr. #：

HUF75639P3-F102

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Through hole N channel 100 V 56A (Tc) 200W (Tc) TO-220-3

Datasheet:

In Stock:

800

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	56A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	25 milliohms @ 56A, 10V
Vgs(th) (max) at Id	4V @ 250μA
Gate Charge (Qg) (max) at Vgs	130 nC @ 20 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (Max)	2000 pF @ 25 V
FET Function	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package/Case	TO-220-3

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