NVH4L015N065SC1 ON | ON agency

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Mfr. #：

NVH4L015N065SC1

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Through Hole N Channel 650 V 142A (Tc) 500W (Tc) TO-247-4L

Datasheet:

In Stock:

410

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	Automotive, AEC-Q101
Package	Tray
FET Type	N-channel
Technology	SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss)	650 V
Current at 25°C - Continuous Drain (Id)	142A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	15V, 18V
On-Resistance (max) at Id, Vgs	18 mOhm @ 75A, 18V
Vgs(th) (max) at Id	4.3V @ 25mA
Gate Charge (Qg) (max) at Vgs	283 nC @ 18 V
Vgs (max)	22V, -8V
Input Capacitance (Ciss) (Max) at Different Vds	4790 pF @ 325 V
FET Function	-
Power Dissipation (Max)	500W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package/Case	TO-247-4

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