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NVH4L015N065SC1 Image

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Mfr. #:
NVH4L015N065SC1
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through Hole N Channel 650 V 142A (Tc) 500W (Tc) TO-247-4L
Datasheet:
In Stock:
410
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series Automotive, AEC-Q101
Package Tray
FET Type N-channel
Technology SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 142A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 15V, 18V
On-Resistance (max) at Id, Vgs 18 mOhm @ 75A, 18V
Vgs(th) (max) at Id 4.3V @ 25mA
Gate Charge (Qg) (max) at Vgs 283 nC @ 18 V
Vgs (max) 22V, -8V
Input Capacitance (Ciss) (Max) at Different Vds 4790 pF @ 325 V
FET Function -
Power Dissipation (Max) 500W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package/Case TO-247-4
ON hot selling models
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