NVH4L015N065SC1 ON | ON agency

img for reference only

Mfr. #：

NVH4L015N065SC1

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Through Hole N Channel 650 V 142A (Tc) 500W (Tc) TO-247-4L

Datasheet:

In Stock:

410

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	Automotive, AEC-Q101
Package	Tray
FET Type	N-channel
Technology	SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss)	650 V
Current at 25°C - Continuous Drain (Id)	142A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	15V, 18V
On-Resistance (max) at Id, Vgs	18 mOhm @ 75A, 18V
Vgs(th) (max) at Id	4.3V @ 25mA
Gate Charge (Qg) (max) at Vgs	283 nC @ 18 V
Vgs (max)	22V, -8V
Input Capacitance (Ciss) (Max) at Different Vds	4790 pF @ 325 V
FET Function	-
Power Dissipation (Max)	500W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package/Case	TO-247-4

FDB9409-F085
HUF75639S3ST

These N-channel power MOSFETs are produced using the innovative UltraFET process. This advanced process technology enables the lowest on-resistance per unit silicon area, resulting in excellent performance. The device can withstand high energy in avalanche mode, and the diode has a very short?
HUFA75645S3S

N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 mΩ
FQB47P06TM-AM002

This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is used to reduce on-resistance, provide excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power
NTB35N15T4G
NTBS2D7N06M7

This N-channel MV MOSFET is produced using ON Semiconductor's advanced Power Trench process, which incorporates shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance and best-in-class
FDB52N20TM

UniFETTM MOSFET is a high voltage MOSFET series based on planar stripe and DMOS technology. This MOSFET is suitable for reducing on-resistance, providing better switching performance and higher avalanche energy strength. This device series is suitable for switching power converter applications such
FDB8832