FQU2N90TU-WS ON | ON agency

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Mfr. #：

FQU2N90TU-WS

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Tongkou N channel 900 V 1.7a (TC) 2.5W (TA), 50W (TC) I-PAK

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	QFET?
Package	Tube
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	900 V
Current at 25°C - Continuous Drain (Id)	1.7A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	7.2 ohms @ 850mA, 10V
Vgs(th) (max) at Id	5V @ 250μA
Gate Charge?(Qg) (max) at Vgs	15 nC @ 10 V
Vgs (max)	±30V
Various Vds Input Capacitance (Ciss) (max)	500 pF @ 25 V
FET Function	-
Power Dissipation (max)	2.5W (Ta), 50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package/Case	TO-251-3 Short Lead, IPak, TO-251AA

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