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FQU2N90TU-WS Image

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Mfr. #:
FQU2N90TU-WS
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Tongkou N channel 900 V 1.7a (TC) 2.5W (TA), 50W (TC) I-PAK
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series QFET?
Package Tube
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 900 V
Current at 25°C - Continuous Drain (Id) 1.7A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 7.2 ohms @ 850mA, 10V
Vgs(th) (max) at Id 5V @ 250μA
Gate Charge?(Qg) (max) at Vgs 15 nC @ 10 V
Vgs (max) ±30V
Various Vds Input Capacitance (Ciss) (max) 500 pF @ 25 V
FET Function -
Power Dissipation (max) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package/Case TO-251-3 Short Lead, IPak, TO-251AA
ON hot selling models
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