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FQP13N06L Image

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Mfr. #:
FQP13N06L
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through hole N channel 60 V 13.6A (Tc) 45W (Tc) TO-220-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series QFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 13.6A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 5V, 10V
On-Resistance (max) at different Id, Vgs 110 milliohms @ 6.8A, 10V
Vgs(th) (max) at different Id 2.5V @ 250μA
Gate Charge?(Qg) (max) at different Vgs 6.4 nC @ 5 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 350 pF @ 25 V
FET Function -
Power Dissipation (max) 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package/Case TO-220-3
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