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FDP2532 Image

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Mfr. #:
FDP2532
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through hole N channel 150 V 8A (Ta), 79A (Tc) 310W (Tc) TO-220-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series PowerTrench?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 150 V
Current at 25°C - Continuous Drain (Id) 8 A (Ta), 79 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6 V, 10 V
On-Resistance (max) at Id, Vgs 16 mOhm @ 33 A, 10 V
Vgs(th) (max) at Id 4 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs 107 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 5870 pF @ 25 V
FET Function -
Power Dissipation (Max) 310W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package/Case TO-220-3
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