LOGO
LOGO
FDA16N50LDTU Image

img for reference only

Mfr. #:
FDA16N50LDTU
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through Hole N Channel 500 V 16.5A (Tc) 205W (Tc) TO-3PN (L Type)
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 500 V
Current at 25°C - Continuous Drain (Id) 16.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 380 mOhm @ 8.3A, 10V
Vgs(th) (max) at Id 5V @ 250μA
Gate Charge?(Qg) (max) at Vgs 45 nC @ 10 V
Vgs (max) ±30V
Various Vds Input Capacitance (Ciss) (max) 1945 pF @ 25 V
FET Function -
Power Dissipation (max) 205W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PN (L-Type)
Package/Case TO-3P-3, SC-65-3 (Formed Leads)
ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd