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NTTFS1D8N02P1E Image

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Mfr. #:
NTTFS1D8N02P1E
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Surface mount N-channel 25 V 20A (Ta), 152A (Tc) 800mW (Ta), 48W (Tc) 8-PQFN (3.3x3.3)
Datasheet:
In Stock:
2083
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 25 V
Current at 25°C - Continuous Drain (Id) 20 A (Ta), 152 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 1.3 mOhm @ 30 A, 10 V
Vgs(th) (max) at Id 2 V @ 700 μA
Gate Charge (Qg) (max) at Vgs 38 nC @ 10 V
Vgs (max) 16V, -12V
Input capacitance (Ciss) (max) at different Vds 3159 pF @ 13 V
FET function -
Power dissipation (max) 800mW (Ta), 48W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package 8-PQFN (3.3x3.3)
Package/case 8-PowerWDFN
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