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NTD4815N-35G Image

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Mfr. #:
NTD4815N-35G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through-hole N-channel 30 V 6.9A (Ta), 35A (Tc) 1.26W (Ta), 32.6W (Tc) I-Pak
Datasheet:
In Stock:
11
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Packaging Tubes
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 6.9A (Ta), 35A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 11.5V
On-Resistance (max) at Id, Vgs 15 milliohms @ 30A, 10V
Vgs(th) (max) at Id 2.5V @ 250μA
Gate Charge (Qg) (max) at Vgs 14.1 nC @ 11.5 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) at different Vds 770 pF @ 12 V
FET function -
Power dissipation (max) 1.26W (Ta), 32.6W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package I-Pak
Package/case TO-251-3 Stub lead, IPak
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