NTMFS4D2N10MDT1G ON | ON agency

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Mfr. #：

NTMFS4D2N10MDT1G

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Surface mount N-channel 100 V 16.4A (Ta), 113A (Tc) 2.8W (Ta), 132W (Tc) 5-DFN (5x6) (8-SOFL)

Datasheet:

In Stock:

1471

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	-
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	16.4A (Ta), 113A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	6V, 10V
On-Resistance (max) at Id, Vgs	4.3 mOhm @ 46A, 10V
Vgs(th) (max) at Id	4V @ 239μA
Gate Charge (Qg) (max) at Vgs	60 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max) at different Vds	3100 pF @ 50 V
FET function	-
Power dissipation (max)	2.8W (Ta), 132W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	5-DFN (5x6) (8-SOFL)
Package/case	8-PowerTDFN, 5-lead

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