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NTMFS4D2N10MDT1G Image

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Mfr. #:
NTMFS4D2N10MDT1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Surface mount N-channel 100 V 16.4A (Ta), 113A (Tc) 2.8W (Ta), 132W (Tc) 5-DFN (5x6) (8-SOFL)
Datasheet:
In Stock:
1471
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 16.4A (Ta), 113A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6V, 10V
On-Resistance (max) at Id, Vgs 4.3 mOhm @ 46A, 10V
Vgs(th) (max) at Id 4V @ 239μA
Gate Charge (Qg) (max) at Vgs 60 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) at different Vds 3100 pF @ 50 V
FET function -
Power dissipation (max) 2.8W (Ta), 132W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package 5-DFN (5x6) (8-SOFL)
Package/case 8-PowerTDFN, 5-lead
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