LOGO
LOGO
NGTB25N120IHLWG Image

img for reference only

Mfr. #:
NGTB25N120IHLWG
Mfr.:
ON Semiconductor
Batch:
23+
Description:
IGBT 1200 V 50 A 192 W Through hole TO-247-3
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
onsemi
-
Packaging Tubes
IGBT Type -
Voltage- Collector-Emitter Breakdown (Max) 1200 V
Current- Collector (Ic) (Max) 50 A
Current- Collector Pulse (Icm) 200 A
Vce(on) (Max) for Different Vge, Ic 2.3V @ 15V, 25A
Power-Max 192 W
Switching Energy 800μJ (Off)
Input Type Standard
Gate Charge 200 nC
Td (On/Off) Value at 25°C -/235ns
Test Conditions 600V, 25A, 10 Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-247-3
Supplier Device Package TO-247-3
Related models
  • LM324MX

    General Purpose Amplifier 4 Circuit 14-SOP

  • 1N5401RLG

    Diode Standard 100 V 3A Through Hole Axial

  • S3B

    Diode Standard 100 V 3A Surface Mount Type SMC (DO-214AB)

  • S1K

    Diode Standard 800 V 1A Surface Mount Type DO-214AC (SMA)

  • FHP3430IMTC14

    Voltage Feedback Amplifier 4 Circuit Full Rail-to-Rail 14-TSSOP

  • SB140

    Diode Schottky 40 V 1A Through Hole DO-41

  • SE5230DR2G

    Universal Amplifier 1 Circuit Full Rail-to-Rail 8-SOIC

  • NSR01F30MXT5G

    Diodes, Shitki 30 V 100MA surface sticker 2-x3dfn (0.6x0.3) (0201) (0201)

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd