LOGO
LOGO
NGTB25N120IHLWG Image

img for reference only

Mfr. #:
NGTB25N120IHLWG
Mfr.:
ON Semiconductor
Batch:
23+
Description:
IGBT 1200 V 50 A 192 W Through hole TO-247-3
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
onsemi
-
Packaging Tubes
IGBT Type -
Voltage- Collector-Emitter Breakdown (Max) 1200 V
Current- Collector (Ic) (Max) 50 A
Current- Collector Pulse (Icm) 200 A
Vce(on) (Max) for Different Vge, Ic 2.3V @ 15V, 25A
Power-Max 192 W
Switching Energy 800μJ (Off)
Input Type Standard
Gate Charge 200 nC
Td (On/Off) Value at 25°C -/235ns
Test Conditions 600V, 25A, 10 Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-247-3
Supplier Device Package TO-247-3
Related models
  • FOD817D300W

    The FOD814 contains two GaAs infrared emitting diodes in a 4-pin dual-wire package, connected in anti-parallel, driving a silicon phototransistor output. The FOD817 series contains one GaAs infrared emitting diode in a 4-pin dual-wire package, driving a silicon phototransistor output.

  • H11A1VM

    This general purpose optocoupler consists of a GaAs infrared emitting diode driving a silicon phototransistor in a 6-lead dual in-line package.

  • H11AA4SR2VM

    The H11AAXM series consists of two GaAs infrared emitting diodes connected in anti-phase parallel to drive a single silicon phototransistor output.

  • MOCD217R2VM

    The MOCD217M device consists of two GaAs infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors in a small surface mount plastic package. It is suitable for high density applications without the need for through board mounting.

  • H11F3SVM

    The H11FXM series consists of a GaAIS IRED light emitting diode optically coupled to a symmetrical bidirectional silicon photodetector. The detector is insulated from the input and functions like an ideal isolated FET, designed for distortion-free control of low level AC and DC analog signals.

  • TIL117VM

    The MOC8100, TIL111, and TIL117 optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-lead dual-inline package.

  • TIL113SM

    The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M feature a GaAs infrared emitting diode optically coupled to a silicon epitaxial planar photodarlington.

  • 4N38SM

    The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor type optically coupled optoisulators. A gallium arsenide infrared emitting diode is coupled to a high voltage NPN silicon phototransistor. The device is available in a standard plastic six-pin dual in-line package.

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd