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FGL60N100BNTD Image

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Mfr. #:
FGL60N100BNTD
Mfr.:
ON Semiconductor
Batch:
23+
Description:
IGBT NPT and Trench 1000 V 60 A 180 W Through Hole TO-264-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Packaging Tube
IGBT Type NPT and Trench
Voltage - Collector Emitter Breakdown (max) 1000 V
Current - Collector (Ic) (max) 60 A
Current - Collector Pulse (Icm) 120 A
Vce(on) (max) at Vge, Ic 2.9V @ 15V, 60A
Power - max 180 W
Switching Energy -
Input Type Standard
Gate Charge 275 nC
Td (on/off) at 25°C 140ns/630ns
Test Conditions 600V, 60A, 51 Ohm, 15V
Reverse recovery time (trr) 1.2 μs
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Through hole
Package/case TO-264-3, TO-264AA
Supplier device package TO-264-3
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