LOGO
LOGO
NGTB50N120FL2WG Image

img for reference only

Mfr. #:
NGTB50N120FL2WG
Mfr.:
ON Semiconductor
Batch:
23+
Description:
IGBT Trench Field Stop 1200 V 100 A 535 W Through Hole TO-247
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
onsemi
-
Fittings
Last Sale
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 100 A
Current - Collector Pulse (Icm) 200 A
Vce(on) (Max) 2.2V @ 15V, 50A
Power - Max 535 W
Switching Energy 4.4mJ (ON), 1.4mJ (OFF)
Input Type Standard
Gate Charge 311 nC
25°C Td (on/off) value 118ns/282ns
Test conditions 600V, 50A, 10 ohm, 15V
Reverse recovery time (trr) 256 ns
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Package/case TO-247-3
Supplier device package TO-247
NGTB50
Related models
  • KSC1009GBU

    Transistor - Bipolar (BJT) - Single NPN 140 V 700 mA 50MHz 800 mW Through Hole TO-92-3

  • KSP8599TF

    Transistor - Bipolar (BJT) - Single PNP 80 V 500 mA 150MHz 625 mW Through Hole TO-92-3

  • KSC1009GTA

    Transistor - Bipolar (BJT) - Single NPN 140 V 700 mA 50MHz 800 mW Through Hole TO-92-3

  • KSC1187OBU

    Transistor - Bipolar (BJT) - Single NPN 20 V 30 mA 700MHz 250 mW Through Hole TO-92-3

  • KSC1187YBU

    Transistor - Bipolar (BJT) - Single NPN 20 V 30 mA 700MHz 250 mW Through Hole TO-92-3

  • KST5088MTF

    Transistor - Bipolar (BJT) - Single NPN 30 V 50 mA 50MHz 350 mW Surface Mount SOT-23-3

  • KSP8599TA

    Transistor - Bipolar (BJT) - Single PNP 80 V 500 mA 150MHz 625 mW Through Hole TO-92-3

  • KSP8598TA

    Transistor - Bipolar (BJT) - Single PNP 60 V 500 mA 150MHz 625 mW Through Hole TO-92-3

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd