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2N7002ET1G Image

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Mfr. #：
2N7002ET1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Surface mount N channel 60 V 260mA (Ta) 300mW (Tj) SOT-23-3 (TO-236)
Datasheet:
Datasheet
In Stock:
503144
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
onsemi
-
Tape and Reel (TR)
On Sale
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 260 mA (Ta)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On Resistance (Max) at Different Id, Vgs 2.5 Ohm @ 240 mA, 10 V
Vgs(th) (Max) at Different Id 2.5 V @ 250 μA
Gate Charge?(Qg) (Max) at Different Vgs 0.81 nC @ 5 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 26.7 pF @ 25 V
FET function -
Power dissipation (max) 300mW (Tj)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package SOT-23-3 (TO-236)
Package/case TO-236-3, SC-59, SOT-23-3
2N7002
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