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FJNS4207RTA Image

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Mfr. #:
FJNS4207RTA
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92S
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tape Box (TB)
Transistor Type PNP - Pre-Bias
Current - Collector (Ic) (max) 100 mA
Voltage - Collector Emitter Breakdown (max) 50 V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter (R2) 47 kOhms
DC Current Gain (hFE) (min) at Ic, Vce 68 @ 5mA, 5V
Vce Saturation Voltage Drop (max) at Ib, Ic 300mV @ 500μA, 10mA
Current - Collector Cutoff (max) 100nA (ICBO)
Frequency - Transition 200 MHz
Power - Maximum 300 mW
Mounting Type Through Hole
Package/Case TO-226-3, TO-92-3 Short Body
Supplier Device Package TO-92S
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