FJNS4213RBU ON | ON agency

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Mfr. #：

FJNS4213RBU

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92S

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	-
Packaging	Bulk
Transistor Type	PNP - Pre-Bias
Current - Collector (Ic) (max)	100 mA
Voltage - Collector Emitter Breakdown (max)	50 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter (R2)	47 kOhms
DC Current Gain (hFE) (min) for Ic, Vce	68 @ 5mA, 5V
Vce Saturation Voltage Drop (max) for Ib, Ic	300mV @ 500μA, 10mA
Current - Collector Cutoff (max)	100nA (ICBO)
Frequency - Transition	200 MHz
Power - Maximum	300 mW
Mounting Type	Through Hole
Package/Case	TO-226-3, TO-92-3 Short Body
Supplier Device Package	TO-92S

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