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BSR50_J35Z Image

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Mfr. #:
BSR50_J35Z
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Single NPN - Darlington 45 V 1.5 A 625 mW Through Hole TO-92-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Bulk
Transistor Type NPN - Darlington
Current - Collector (Ic) (max) 1.5 A
Voltage - Collector Emitter Breakdown (max) 45 V
Vce Saturation Voltage Drop at Different Ib, Ic (max) 1.6V @ 4mA, 1A
Current - Collector Cutoff (max) 50nA (ICBO)
DC Current Gain (hFE) at Different Ic, Vce (min) 2000 @ 500mA, 10V
Power - max 625 mW
Frequency - Transition -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-226-3, TO-92-3 (TO-226AA)Formed Lead
Supplier Device Package TO-92-3
ON hot selling models
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