D44C8 ON | ON agency

img for reference only

Mfr. #：

D44C8

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Transistor - Bipolar (BJT) - Single NPN 60 V 4 A 40MHz 60 W Through Hole TO-220-3

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	-
Package	Tubes
Transistor Type	NPN
Current - Collector (Ic) (max)	4 A
Voltage - Collector-Emitter Breakdown (max)	60 V
Vce Saturation Voltage Drop (max) for Different Ib, Ic	500mV @ 50mA, 1A
Current - Collector Cutoff (max)	10μA
DC Current Gain (hFE) (min) for Different Ic, Vce	20 @ 2A, 1V
Power - max	60 W
Frequency - Transition	40MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package/Case	TO-220-3
Supplier Device Package	TO-220-3

2N5038G

Transistor - Bipolar (BJT) - Single NPN 90 V 20 A 140 W Through Hole TO-204 (TO-3)
MMBT6427LT1G

Transistor - Bipolar (BJT) - Single NPN - Darlington 40 V 500 mA 225 mW Surface Mount SOT-23-3 (TO-236)
BC817-40WT1G

Transistor - Bipolar (BJT) - Single NPN 45 V 500 mA 100MHz 460 mW Surface Mount SC-70-3 (SOT323)
BC807-40WT1G

Transistor - Bipolar (BJT) - Single PNP 45 V 500 mA 100MHz 460 mW Surface Mount SC-70-3 (SOT323)
BC807-16LT1G

Transistor - Bipolar (BJT) - Single PNP 45 V 500 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
BC849BLT1G

Transistor - Bipolar (BJT) - Single NPN 30 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
MJ11032G

Transistor - Bipolar (BJT) - Single NPN - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)
MJ11033G

Transistor - Bipolar (BJT) - Single PNP - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)