LOGO
LOGO
NSBC114YF3T5G Image

img for reference only

Mfr. #:
NSBC114YF3T5G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Single, Pre-Biased) NPN - Pre-Biased 50 V 100 mA 254 mW Surface Mount SOT-1123
Datasheet:
In Stock:
8218
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Packaging Tape and Reel (TR)
Transistor Type NPN - Pre-Bias
Current - Collector (Ic) (max) 100 mA
Voltage - Collector Emitter Breakdown (max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter (R2) 47 kOhms
DC Current Gain (hFE) (min) at Ic, Vce 80 @ 5mA, 10V
Vce Saturation Voltage Drop (max) at Ib, Ic 250mV @ 300μA, 10mA
Current - Collector Cutoff (max) 500nA
Power - max 254 mW
Mounting Type Surface Mount
Package/Case SOT-1123
Supplier Device Package SOT-1123
Related models
  • 1N4938_T50R

    Diode Standard 200 V 500mA Through Hole DO-35

  • 1N4938TR

    Diode Standard 200 V 500mA Through Hole DO-35

  • 1N914_T26A

    Diode Standard 100 V 200mA Through Hole DO-35

  • 1N914_T50R

    Diode Standard 100 V 200mA Through Hole DO-35

  • 1N914A

    Diode Standard 100 V 200mA Through Hole DO-35

  • 1N914A_T50R

    Diode Standard 100 V 200mA Through Hole DO-35

  • 1N914B_S00Z

    Diode Standard 100 V 200mA Through Hole DO-35

  • 1N914B_S62Z

    Diode Standard 100 V 200mA Through Hole DO-35

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd