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KSD363O Image

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Mfr. #:
KSD363O
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Single NPN 120 V 6 A 10MHz 40 W Through Hole TO-220-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (max) 6 A
Voltage - Collector Emitter Breakdown (max) 120 V
Vce Saturation Voltage Drop at Different Ib, Ic (max) 1V @ 100mA, 1A
Current - Collector Cutoff (max) 1mA (ICBO)
DC Current Gain (hFE) at Different Ic, Vce (min) 70 @ 1A, 5V
Power - max 40 W
Frequency - Transition 10MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-220-3
Supplier Device Package TO-220-3
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