KSA910YBU ON | ON agency

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Mfr. #：

KSA910YBU

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Transistor - Bipolar (BJT) - Single PNP 150 V 50 mA 100MHz 800 mW Through Hole TO-92-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	-
Packaging	Bulk
Transistor Type	PNP
Current - Collector (Ic) (max)	50 mA
Voltage - Collector Emitter Breakdown (max)	150 V
Vce Saturation Voltage Drop (max) for Different Ib, Ic	800mV @ 1mA, 10mA
Current - Collector Cutoff (max)	100nA (ICBO)
DC Current Gain (hFE) (min) for Different Ic, Vce	120 @ 10mA, 5V
Power - max	800 mW
Frequency - Transition	100MHz
Operating Temperature	-
Mounting Type	Through Hole
Package/Case	TO-226-3, TO-92-3 Long Body
Supplier Device Package	TO-92-3

KSC2330ABU

Transistor - Bipolar (BJT) - Single NPN 400 V 100 mA 50MHz 1 W Through Hole TO-92-3
KSA910YBU

Transistor - Bipolar (BJT) - Single PNP 150 V 50 mA 100MHz 800 mW Through Hole TO-92-3
KSC2330RTA

Transistor - Bipolar (BJT) - Single NPN 300 V 100 mA 50MHz 1 W Through Hole TO-92-3
KSC2330RBU

Transistor - Bipolar (BJT) - Single NPN 300 V 100 mA 50MHz 1 W Through Hole TO-92-3
KSC2330ASHBU

Transistor - Bipolar (BJT) - Single NPN 400 V 100 mA 50MHz 1 W Through Hole TO-92-3
MPS8598

Transistor - Bipolar (BJT) - Single PNP 60 V 100 mA 150MHz 625 mW Through Hole TO-92-3
LA72910V-TLM-H

Video IC Package
MPSA13RA

Crystal Pipe-Double Extreme (BJT) -Sloretic NPN-Dallington 30 V 1.2 A 125MHz 625 MW Pass to-92-3