KSC2330ASHBU ON | ON agency

img for reference only

Mfr. #：

KSC2330ASHBU

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Transistor - Bipolar (BJT) - Single NPN 400 V 100 mA 50MHz 1 W Through Hole TO-92-3

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (max)	100 mA
Voltage - Collector Emitter Breakdown (max)	400 V
Vce Saturation Voltage Drop at Different Ib, Ic (max)	500mV @ 1mA, 10mA
Current - Collector Cutoff (max)	100nA (ICBO)
DC Current Gain (hFE) at Different Ic, Vce (min)	40 @ 20mA, 10V
Power - max	1 W
Frequency - Transition	50MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package/Case	TO-226-3, TO-92-3 Long Body
Supplier Device Package	TO-92-3

PN2907ATFR

PN Series PNP 625 mW 60 V 800 mA Through Hole General Purpose Transistor-TO-92-3
NTMFS034N15MC

MOSFET PTNG 150V 34MOHM PQFN56
2N4401TFR

2N4401 Series 40 V CE Breakdown 0.6 A NPN General Purpose Amplifier - TO-92
BC849CLT1G

BC Series 30 V 100 mA Surface Mount NPN Silicon General Purpose Transistor - SOT-23
NTJD5121NT1G

NTJD Series Dual N-Channel 60 V 1.6 Ohm 250 mW Surface Mount Power MOSFET - SOT-363
KSA1015YTA

KSA1015 Series 50 V 150 mA Through Hole PNP Epitaxial Silicon Transistor - TO-92-3
BC847ALT1G

BC847ALT1G Series NPN 45 V 100 mA Surface Mount General Purpose Transistor - SOT-23
NTJS3151PT2G

Single P-Channel 12 V 60 mOhm 8.6 nC 625 mW Trench Power Mosfet - SOT-363