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KSC1009GTA Image

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Mfr. #:
KSC1009GTA
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Single NPN 140 V 700 mA 50MHz 800 mW Through Hole TO-92-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tape Box (TB)
Transistor Type NPN
Current - Collector (Ic) (max) 700 mA
Voltage - Collector Emitter Breakdown (max) 140 V
Vce Saturation Voltage Drop at Different Ib, Ic (max) 700mV @ 20mA, 200mA
Current - Collector Cutoff (max) 100nA (ICBO)
DC Current Gain (hFE) at Different Ic, Vce (min) 200 @ 50mA, 2V
Power - max 800 mW
Frequency - Transition 50MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-226-3, TO-92-3 (TO-226AA) Formed Lead
Supplier Device Package TO-92-3
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