2N3415_D26Z ON | ON agency

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Mfr. #：

2N3415_D26Z

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Transistor - Bipolar (BJT) - Single NPN 25 V 500 mA 625 mW Through Hole TO-92-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	-
Packaging	Tape and Reel (TR)
Transistor Type	NPN
Current - Collector (Ic) (max)	500 mA
Voltage - Collector-Emitter Breakdown (max)	25 V
Vce Saturation Voltage Drop (max) for Different Ib, Ic	300mV @ 3mA, 50mA
Current - Collector Cutoff (max)	100nA (ICBO)
DC Current Gain (hFE) (min) for Different Ic, Vce	180 @ 2mA, 4.5V
Power - max	625 mW
Frequency - Transition	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package/Case	TO-226-3, TO-92-3 (TO-226AA)Formed Lead
Supplier Device Package	TO-92-3

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