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2N3415_D27Z Image

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Mfr. #:
2N3415_D27Z
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Single NPN 25 V 500 mA 625 mW Through Hole TO-92-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Packaging Tape and Reel (TR)
Transistor Type NPN
Current - Collector (Ic) (max) 500 mA
Voltage - Collector-Emitter Breakdown (max) 25 V
Vce Saturation Voltage Drop (max) for Different Ib, Ic 300mV @ 3mA, 50mA
Current - Collector Cutoff (max) 100nA (ICBO)
DC Current Gain (hFE) (min) for Different Ic, Vce 180 @ 2mA, 4.5V
Power - max 625 mW
Frequency - Transition -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-226-3, TO-92-3 (TO-226AA)Formed Lead
Supplier Device Package TO-92-3
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