2N4123TAR ON | ON agency

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Mfr. #：

2N4123TAR

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Transistor - Bipolar (BJT) - Single NPN 30 V 200 mA 250MHz 625 mW Through Hole TO-92-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	-
Package	Tape Box (TB)
Transistor Type	NPN
Current - Collector (Ic) (max)	200 mA
Voltage - Collector Emitter Breakdown (max)	30 V
Vce Saturation Voltage Drop (max) for Different Ib, Ic	300mV @ 5mA, 50mA
Current - Collector Cutoff (max)	50nA (ICBO)
DC Current Gain (hFE) (min) for Different Ic, Vce	50 @ 2mA, 1V
Power - max	625 mW
Frequency - Transition	250MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package/Case	TO-226-3, TO-92-3 (TO-226AA)Formed Lead
Supplier Device Package	TO-92-3

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