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2N4123TAR Image

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Mfr. #:
2N4123TAR
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Single NPN 30 V 200 mA 250MHz 625 mW Through Hole TO-92-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tape Box (TB)
Transistor Type NPN
Current - Collector (Ic) (max) 200 mA
Voltage - Collector Emitter Breakdown (max) 30 V
Vce Saturation Voltage Drop (max) for Different Ib, Ic 300mV @ 5mA, 50mA
Current - Collector Cutoff (max) 50nA (ICBO)
DC Current Gain (hFE) (min) for Different Ic, Vce 50 @ 2mA, 1V
Power - max 625 mW
Frequency - Transition 250MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-226-3, TO-92-3 (TO-226AA)Formed Lead
Supplier Device Package TO-92-3
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