LOGO
LOGO
BC239CTA Image

img for reference only

Mfr. #:
BC239CTA
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Single NPN 25 V 100 mA 250MHz 500 mW Through Hole TO-92-3
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tape Box (TB)
Transistor Type NPN
Current - Collector (Ic) (max) 100 mA
Voltage - Collector Emitter Breakdown (max) 25 V
Vce Saturation Voltage Drop at Different Ib, Ic (max) 600mV @ 5mA, 100mA
Current - Collector Cutoff (max) 15nA
DC Current Gain (hFE) at Different Ic, Vce (min) 380 @ 2mA, 5V
Power - max 500 mW
Frequency - Transition 250MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-226-3, TO-92-3 (TO-226AA) Formed Lead
Supplier Device Package TO-92-3
Related models
  • FSBM10SM60A

    Power Driver Module IGBT 3-Phase 600 V 10 A 32-PowerDIP Module (1.370", 34.80mm)

  • FSBM15SH60A

    Power Driver Module IGBT 3-Phase 600 V 15 A 32-PowerDIP Module (1.370", 34.80mm)

  • FSBM15SM60A

    Power Driver Module IGBT 3-Phase 600 V 15 A 32-PowerDIP Module (1.370", 34.80mm)

  • FSBM20SH60A

    Power Driver Module IGBT 3-Phase 600 V 20 A 32-PowerDIP Module (1.370", 34.80mm)

  • FSBM20SM60A

    Power Driver Module IGBT 3-Phase 600 V 20 A 32-PowerDIP Module (1.370", 34.80mm)

  • FSBM30SH60A

    Power Driver Module IGBT 3-Phase 600 V 30 A 32-PowerDIP Module (1.370", 34.80mm)

  • FSBM30SM60A

    Power Driver Module IGBT 3-Phase 600 V 30 A 32-PowerDIP Module (1.370", 34.80mm)

  • FSBS10CH60

    Power Driver Module IGBT 3-Phase 600 V 10 A 27-PowerDIP Module (1.205", 30.60mm)

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd