MPS6601G ON | ON agency

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Mfr. #：

MPS6601G

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Transistor - Bipolar (BJT) - Single NPN 25 V 1 A 100MHz 625 mW Through Hole TO-92 (TO-226)

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (max)	1 A
Voltage - Collector Emitter Breakdown (max)	25 V
Vce Saturation Voltage Drop (max)	600mV @ 100mA, 1A
Current - Collector Cutoff (max)	100nA
DC Current Gain (hFE) (min)	50 @ 500mA, 1V
Power - max	625 mW
Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package/Case	TO-226-3, TO-92-3 Long Body
Supplier Device Package	TO-92 (TO-226)

3LN01C-TB-H

Surface mount N channel 30 V 150mA (Ta) 250mW (Ta) SC-59-3/CP3
3LN01SS-TL-H

Surface Mount N Channel 30 V 150mA (Ta) 150mW (Ta) SMCP
3LP01C-TB-H

Surface mount type P channel 30 V 100mA (Ta) 250mW (Ta) SC-59-3/CP3
3LP01SS-TL-H

Surface Mount Type P Channel 30 V 100mA (Ta) 150mW (Ta) SMCP
5LN01SS-TL-E

Surface Mount N Channel 50 V 100mA (Ta) 150mW (Ta) 3-SSFP
5LP01M-TL-H

Surface Mount Type P Channel 50 V 70mA (Ta) 150mW (Ta) MCP
ATP107-TL-H

Surface mount type P channel 40 V 50A (Ta) 50W (Tc) ATPAK
ATP201-TL-H

Surface mount N channel 30 V 35A (Ta) 30W (Tc) ATPAK