LOGO
LOGO
NSBA114TDP6T5G Image

img for reference only

Mfr. #:
NSBA114TDP6T5G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Array - Pre-Biased 2 PNP Pre-Biased (Dual) 50V 100mA 408mW Surface Mount SOT-963
Datasheet:
In Stock:
4890
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Packaging Tape and Reel (TR)
Transistor Type 2 PNP Pre-Biased (Dual)
Current - Collector (Ic) (max) 100mA
Voltage - Collector Emitter Breakdown (max) 50V
Resistor - Base (R1) 10 kiloohm
Resistor - Emitter (R2) -
DC Current Gain (hFE) (min) for different Ic, Vce 160 @ 5mA, 10V
Vce Saturation Voltage Drop (max) for different Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (max) 500nA
Frequency - Transition -
Power - Maximum 408mW
Mounting Type Surface Mount
Package/Case SOT-963
Supplier Device Package SOT-963
Related models
  • FDMA7672

    This device is designed to provide the highest efficiency and thermal performance for synchronous buck converters. Low rDS(on) and gate charge provide excellent switching performance.

  • FDMA1032CZ

    This device is specifically designed as a single package solution for DC/DC "switching" MOSFETs in mobile phones and other ultra-portable applications. It features a separate N-channel and P-channel MOSFET, both with low on-resistance for minimum conduction losses. The gate of each MOSFET

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd