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KSD2012GTU Image

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Mfr. #:
KSD2012GTU
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Single NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3
Datasheet:
In Stock:
332
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tube
Transistor Type NPN
Current - Collector (Ic) (max) 3 A
Voltage - Collector Emitter Breakdown (max) 60 V
Vce Saturation Voltage Drop at Different Ib, Ic (max) 1V @ 200mA, 2A
Current - Collector Cutoff (max) 100μA (ICBO)
DC Current Gain (hFE) at Different Ic, Vce (min) 150 @ 500mA, 5V
Power - max 25 W
Frequency - Transition 3MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-220-3 Whole package
Supplier device package TO-220F-3
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