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MJ11032G Image

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Mfr. #:
MJ11032G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Single NPN - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tray
Transistor Type NPN - Darlington
Current - Collector (Ic) (max) 50 A
Voltage - Collector Emitter Breakdown (max) 120 V
Vce Saturation Voltage Drop at Different Ib, Ic (max) 3.5V @ 500mA, 50A
Current - Collector Cutoff (max) 2mA
DC Current Gain (hFE) at Different Ic, Vce (min) 1000 @ 25A, 5V
Power - max 300 W
Frequency - Transition -
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Package/Case TO-204AE
Supplier Device Package TO-204 (TO-3)
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