LOGO
LOGO
MR856RLG Image

img for reference only

Mfr. #:
MR856RLG
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Diode Standard 600 V 3A Through Hole Axial
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Packaging Tape and Reel (TR)
Diode Type Standard
Voltage - DC Reverse (Vr) (max) 600 V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) 1.25 V @ 3 A
Speed ​​ Fast Recovery = < 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 300 ns
Current - Reverse Leakage 10 μA @ 600 V
Mounting Type Through Hole
Package/Case DO-201AA, DO-27, Axial
Supplier Device Package Axial
Operating Temperature - Junction -65°C ~ 125°C
Related models
  • NSVMUN2112T1G

    Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 230 mW Surface Mount SC-59

  • NSVMUN2236T1G

    Transistor - Bipolar (BJT) - Single, Pre-Biased) NPN - Pre-Biased 50 V 100 mA 230 mW Surface Mount SC-59

  • TN6719A_D75Z

    Transistor - Bipolar (BJT) - Single NPN 300 V 200 mA 1 W Through Hole TO-226

  • TN6725A_D26Z

    Transistor - Bipolar (BJT) - Single NPN - Darlington 50 V 1.2 A 1 W Through Hole TO-226

  • TN6725A_D27Z

    Transistor - Bipolar (BJT) - Single NPN - Darlington 50 V 1.2 A 1 W Through Hole TO-226

  • TN6725A_D74Z

    Transistor - Bipolar (BJT) - Single NPN - Darlington 50 V 1.2 A 1 W Through Hole TO-226

  • MPSA20_D26Z

    Transistor - Bipolar (BJT) - Single NPN 40 V 100 mA 125MHz 625 mW Through Hole TO-92-3

  • MPSA20_D27Z

    Transistor - Bipolar (BJT) - Single NPN 40 V 100 mA 125MHz 625 mW Through Hole TO-92-3

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd