LOGO
LOGO
1N5365BG Image

img for reference only

Mfr. #:
1N5365BG
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Zener diode 36V 5W
Datasheet:
In Stock:
3640
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Vz - Zener Voltage 36 V
Mounting Style Through Hole
Package/Case 017AA-2
Pd - Power Dissipation 5 W
Voltage Tolerance 5 %
Ir - Maximum Reverse Leakage Current 500 nA
Zz - Zener Impedance 11 Ohms
Minimum Operating Temperature - 65 C
Maximum Operating Temperature 200 C
Configuration Single
Test Current 30 mA
Qualification
Package Bulk
Series 1N53
Related models
  • NSBA124EDXV6T1G

    Transistor - Bipolar (BJT) - Array - Pre-Biased 2 PNP Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

  • NSBA143EDXV6T1G

    Transistor - Bipolar (BJT) - Array - Pre-Biased 2 PNP Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

  • NSBC123EDXV6T1G

    Transistor - Bipolar (BJT) - Array - Pre-Biased 2 NPN Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

  • NSBC123EPDXV6T1G

    Transistor - Bipolar (BJT) - Array - Pre-Biased 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

  • BD537J

    Transistor - Bipolar (BJT) - Single NPN 80 V 8 A 12MHz 50 W Through Hole TO-220-3

  • BD537K

    Transistor - Bipolar (BJT) - Single NPN 80 V 8 A 12MHz 50 W Through Hole TO-220-3

  • BD537KTU

    Transistor - Bipolar (BJT) - Single NPN 80 V 8 A 12MHz 50 W Through Hole TO-220-3

  • BDW23ATU

    Transistor - Bipolar (BJT) - Single NPN 60 V 6 A 50 W Through Hole TO-220-3

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd